to-92 plastic-encapsulate transistors 805 0s transistor (npn) features z complimentary to 8550s z collector current: i c =0.5a maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 40 v v ceo collector-emitter voltage 25 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.5 a p c collector power dissipation 0.625 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo i c = 100 a , i e =0 40 v collector-emitter breakdown voltage v (br)ceo i c = 0.1ma, i b =0 25 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 40 v , i e =0 0.1 a collector cut-off current i ceo v ce = 20 v , i b =0 0.1 a emitter cut-off current i ebo v eb = 5v, i c =0 0.1 a h fe(1) v ce = 1v, i c = 50ma 85 400 dc current gain h fe(2) v ce = 1v, i c = 500ma 50 collector-emitter saturation voltage v ce (sat) i c =500ma, i b =50ma 0.6 v base-emitter saturation voltage v be (sat) i c =500ma, i b =50ma 1.2 v transition frequency f t v ce = 6v, i c =20ma f = 30mhz 150 mhz classification of h fe(1) rank b c d d3 range 85-160 120-200 160-300 300-400 to-92 1.emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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